Morphology of the Transformation Interface in Reaction-Sintered Silicon Carbide

Silicon Carbide Whisker-mediated Plant Transformation

With the advancement in molecular biology, several metabolic and physiological processes have been elucidated at molecular levels discovering the involvement of different genes. Since the advent of plant transformation 33 years ago, use of plant transformation techniques sparked an interest in fundamental and applied research leading to the development of biological and physical methods of fore...

Observation of Shear Wave Generation at Bonded Silicon- Carbide Interface

The drive toward higher efficiencies and performance in energy production and transportation equipment has posed a continual challenge for the materials scientists and engineers involved in design and construction of such equipment. The laws of thermodynamics specify that increased efficiency can best be achieved by the use of the highest possible temperatures. As the desired operating temperat...

Properties of nanostructured diamond-silicon carbide composites sintered by high pressure infiltration technique

A high-pressure silicon infiltration technique was applied to sinter diamond–SiC composites with different diamond crystal sizes. Composite samples were sintered at pressure 8 GPa and temperature 2170 K. The structure of composites was studied by evaluating x-ray diffraction peak profiles using Fourier coefficients of ab initio theoretical size and strain profiles. The composite samples have pr...

Reaction Bonded Silicon Carbide: Sff, Process Refinement and Applications

Reaction bonded silicon carbide (RBSiC) has a wide variety of industrial applications and a manufacturing process based on Selective Laser Sintering (SLS) has been demonstrated in previous research at the University of Texas. That study was directed toward semiconductor manufacturing applications and was based on prior indirect SLS methods. Several key research questions were addressed for thre...

Silicon Nitride and Silicon Carbide